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NOW - 2010 2009 - 1999 NOW~2010 2016 Lifetime increased to >10,000 on 275nm, 285nm and 295nm SMD LEDs 2015 Efficiency of 275nm LED doubled 2.5mW small chip SMD launched 30mW large chip SMD launched SETi acquires Nitek, Inc. 2014 275nm, 10mW single chip SMD launched SETi 275nm LEDs implemented on International Space Station) 2013 275nm and 310nm LEDs launched in SMD packages for high volume applications 2012 Acquires Certification of International Aerospace Quality Standard, AS9100 New high volume epitaxial growth center opened to create world’s largest capacity of Deep UV LEDs 2011 SETi demonstrates more than 10,000 hours life from 275nm Deep UV LEDs Nominated for SC Manufacturer of the Year award New building procured, begin installing high volume epitaxy production line 2010 ISO9001:2008 certification acquired SETi launches 240nm, 260nm and 270nm to expand its product portfolio to 240nm – 340nm UVTOP Deep UV LEDs successfully complete space qualification SETi demonstrates 100mW from single chip LED operating at 275nm 2009~1999 2009 Prism Award Winners SETi announces highest power from a single 275nm chip (30mW @ 700mA) 2008 Launch of world’s first 50mW Deep UV LED lamps (270 – 290nm) Named DARPA 2005 Strategic investment from SETi World’s first mass production of Deep UV LEDs (275nm, 310nm, 340nm) 2004 Achieved best results in DARPA’s SUVOS program using its AlGaN technology Launched world’s first commercially available Deep UV LED 2002 Relocated to Columbia, South Carolina 1999 Founded in Rensselaer Polytechnic Institute to develop AlGaN epitaxial processes on sapphire substrates