SETi 소개 시작

2016

Lifetime increased to >10,000 on 275nm, 285nm and 295nm SMD LEDs

2015

Efficiency of 275nm LED doubled

2.5mW small chip SMD launched

30mW large chip SMD launched

SETi acquires Nitek, Inc.

2014

275nm, 10mW single chip SMD launched

SETi 275nm LEDs implemented on International Space Station)

2013

275nm and 310nm LEDs launched in SMD packages for high volume applications

2012

Acquires Certification of International Aerospace Quality Standard, AS9100

New high volume epitaxial growth center opened to create world’s largest capacity of Deep UV LEDs

2011

SETi demonstrates more than 10,000 hours life from 275nm Deep UV LEDs

Nominated for SC Manufacturer of the Year award

New building procured, begin installing high volume epitaxy production line

2010

ISO9001:2008 certification acquired

SETi launches 240nm, 260nm and 270nm to expand its product portfolio to 240nm – 340nm

UVTOP Deep UV LEDs successfully complete space qualification

SETi demonstrates 100mW from single chip LED operating at 275nm

2009

Prism Award Winners

SETi announces highest power from a single 275nm chip (30mW @ 700mA)

2008

Launch of world’s first 50mW Deep UV LED lamps (270 – 290nm)

Named DARPA

2005

Strategic investment from SETi

World’s first mass production of Deep UV LEDs (275nm, 310nm, 340nm)

2004

Achieved best results in DARPA’s SUVOS program using its AlGaN technology

Launched world’s first commercially available Deep UV LED

2002

Relocated to Columbia, South Carolina

1999

Founded in Rensselaer Polytechnic Institute to develop AlGaN epitaxial processes on sapphire substrates